savantic semiconductor product specification silicon npn power transistors 2SC3693 d escription with to-220fa package large current ,high speed low collector saturation voltage applications for use in drivers such as dc/dc converters and actuators pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a i b base current 5.0 a t a =25 2 p t total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3693 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =6a; i b =0.6a,l=1mh 60 v v cesat-1 collector-emitter saturation voltage i c =6a; i b =0.3a 0.3 v v cesat-2 collector-emitter saturation voltage i c =8a; i b =0.4a 0.5 v v besat-1 base-emitter saturation voltage i c =6a; i b =0.3a 1.2 v v besat-2 base-emitter saturation voltage i c =8a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =60v; i e =0 10 a i cex collector cut-off current v ce =60v; v be =-1.5v ta=125 10 1.0 a ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =2v 100 h fe-2 dc current gain i c =2a ; v ce =2v 100 200 400 h fe-3 dc current gain i c =6a ; v ce =2v 60 c ob output capacitance i e =0; v cb =10v;f=1mhz 150 pf f t transition frequency i c =1.0a ; v ce =10v 140 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =6a;r l =8.3 d i b1 =-i b2 =0.3a v cc e 50v 0.3 s h fe-2 classifications m l k 100-200 150-300 200-400
savantic semiconductor product specification 3 silicon npn power transistors 2SC3693 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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